参数资料
型号: APT50GT60BRDQ2
元件分类: IGBT 晶体管
英文描述: 110 A, 600 V, N-CHANNEL IGBT, TO-247
封装: TO-247, 3 PIN
文件页数: 7/9页
文件大小: 431K
代理商: APT50GT60BRDQ2
052-6272
Rev
B
12-2005
APT50GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 111°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 50A
Forward Voltage
I
F = 100A
I
F = 50A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.1
2.7
1.8
APT50GT60BRDQ2(G)
40
63
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
22
-
25
-
35
-
3
-
160
-
480
-
6
-
85
-
920
-
20
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 40A, diF/dt = -200A/s
V
R = 400V, TC = 25°C
I
F = 40A, diF/dt = -200A/s
V
R = 400V, TC = 125°C
I
F = 40A, diF/dt = -1000A/s
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.289
0.381
0.00448
0.120
Power
(watts)
RC MODEL
Junction
temp(°C)
Case temperature(°C)
D = 0.9
相关PDF资料
PDF描述
APT50M38JLL 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M50JLC 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M60JNF 71 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M60JN 71 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M75JLLU3 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APT50GT60BRDQ2G 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT50GT60BRG 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
APT50GT60SR 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50GT60SRG 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50M38JFLL 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:*