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参数资料
| 型号： | APT50GT60BRDQ2G |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | ROHS COMPLIANT, TO-247, 3 PIN |
| 文件页数： | 3/9页 |
| 文件大小： | 431K |
| 代理商： | APT50GT60BRDQ2G |
052-6272
Rev
B
12-2005
APT50GT60BRDQ2(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
,THRESHOLD
VOLTAGE
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
160
140
120
100
80
60
40
10
0
160
140
120
100
80
60
40
20
0
5
4
3
2
1
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
1
2
3
4
5
0
5
10
15
20
0
2
4
6
8
10
12
0
50
100
150
200
250
6
8
10
12
14
16
0
25
50
75
100
125
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
160
140
120
100
80
60
40
20
0
T
J = 125°C
T
J = 25°C
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
VGE = 15V
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
I
C = 25A
I
C = 50A
I
C = 100A
I
C = 25A
I
C = 50A
I
C = 100A
T
J = -55°C
15V
11V
10V
9V
13V
8V
7V
6V
T
J = -55°C
IC = 50A
TJ = 25°C
V
CE = 480V
V
CE = 300V
V
CE = 120V
LeadTemperature
Limited
LeadTemperature
Limited
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT60BRG | 功能描述:IGBT 600V 110A 446W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT60SR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60SRG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50M38JFLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT50M38JFLL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
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