参数资料
型号: APT50M50JFLL
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 2/5页
文件大小: 156K
代理商: APT50M50JFLL
2
Transistor
2SC4782
PC — Ta
IC — VCE
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(mW
)
01.2
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
Ta=25C
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B=3.0mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(mA
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
Ta=75C
25C
–25C
Collector current I
C
(mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
Ta=–25C
25C
75C
Collector current I
C
(mA)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE=1V
Ta=75C
25C
–25C
Collector current I
C
(mA)
Forward
current
transfer
ratio
h
FE
–1
–10
–100
–1000
–3
–30
–300
0
1200
1000
800
600
400
200
V
CB=10V
Ta=25C
f=200MHz
Emitter current I
E
(mA)
Transition
frequency
f
T
(MHz
)
1
3
10
30
100
0
6
5
4
3
2
1
I
E=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
Switching time measurement circuit
ton, toff Test Circuit
tstg Test Circuit
220
3.3k
0.1
F
3.3k
50
V
CC=3V
V
out
50
V
in=10V
V
bb=
–3V
V
in
V
in
V
out
t
on
t
off
V
out
10%
90%
0.1
F
0.1
F
A
V
out
V
in=10V
V
bb=2V
90
V
CC=10V
500
50
910
500
1k
0
V
in
t
stg
V
out
10%
(Waveform at A)
相关PDF资料
PDF描述
APT50M50JFLL 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M50JLL 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M50JVFR 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M50JVFR 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M50JVR 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APT50M50JFLL_04 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET
APT50M50JLC 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
APT50M50JLL 功能描述:MOSFET N-CH 500V 71A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:*
APT50M50JVFR 功能描述:MOSFET N-CH 500V 77A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:*
APT50M50JVR 功能描述:MOSFET N-CH 500V 77A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:*