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参数资料
| 型号： | APT50M60JVFR |
| 元件分类： | JFETs |
| 英文描述： | 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 3/5页 |
| 文件大小： | 169K |
| 代理商： | APT50M60JVFR |
050-7265
Rev
A
5-2004
Typical Performance Curves
APT50M60JVFR
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
6.5V
7.5V
5.5V
7V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
6V
0
5
10
15
20
25
30
0
123456
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
140
120
100
80
60
40
20
0
70
60
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
I
D = 31.5A
V
GS = 10V
200
180
160
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
8V
VGS=10V
VGS=20V
NORMALIZED TO
V
GS = 10V @ 31.5A
VGS =15 & 10V
0.0516
0.149
0.0198
0.0260F
0.448F
42.3F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT50M60L2VFRG | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VFR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VFR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VRG | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M60JVR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT50M60L2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M60L2VFR_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V㈢ FREDFET |
| APT50M60L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT50M60L2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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