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参数资料
| 型号： | APT50M60L2VFR |
| 元件分类： | JFETs |
| 英文描述： | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 162K |
| 代理商： | APT50M60L2VFR |
050-5989
Rev
A
5-2004
Typical Performance Curves
APT50M60L2VFR
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
TO-264 MAXTM(L2) Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Switching Energy
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
Switching Energy
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
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| APT50M60L2VR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VRG | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M60L2VFR_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V㈢ FREDFET |
| APT50M60L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT50M60L2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M60L2VR_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V㈢ MOSFET |
| APT50M60L2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
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