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参数资料
| 型号： | APT50M60L2VR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 161K |
| 代理商： | APT50M60L2VR |
050-5986
Rev
A
5-2004
Typical Performance Curves
APT50M60L2VR
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
Switching Energy
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
TO-264 MAXTM(L2) Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M60L2VR_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V㈢ MOSFET |
| APT50M60L2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT50M65 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT50M65B2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT50M65B2FLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
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