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参数资料
| 型号： | APT50M75B2FLLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 5/5页 |
| 文件大小： | 168K |
| 代理商： | APT50M75B2FLLG |
050-7033
Rev
C
9-2004
APT50M75B2FLL_LFLL
5 %
t
r
t
d(on)
Gate Voltage
Drain Voltage
10 %
Drain Current
10%
90%
T
J = 125 C
Switching Energy
0
t
f
t
d(off)
Gate Voltage
Drain Voltage
90 %
Drain Current
10%
90%
T
J = 125 C
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
APT60DF60
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
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| APT50M75LFLLG | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M75LFLL | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M75LFLL | 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M75JLLU2 | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75JLLU2 | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M75B2LL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT50M75B2LL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT50M75B2LLG | 功能描述:MOSFET N-CH 500V 57A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT50M75JFLL | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT50M75JFLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
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