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参数资料
| 型号： | APT50M75JLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 169K |
| 代理商： | APT50M75JLL |
050-7001
Rev
E
9-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT50M75JLL
500V 51A 0.075
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
SOT-227
G
S
D
ISOTOP
"UL Recognized"
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
POWER MOS 7 R MOSFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 25.5A)
Zero Gate Voltage Drain Current (V
DS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
500
0.075
100
500
±100
35
APT50M75JLL
500
51
204
±30
±40
460
3.68
-55 to 150
300
51
50
2500
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M75JLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT50M75JLLU2 | 功能描述:POWER MOD MOSFET 500V 51A SOT227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT50M75JLLU2_06 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Boost chopper MOSFET Power Module |
| APT50M75JLLU3 | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APT50M75LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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