- 您现在的位置：买卖IC网 > PDF目录57948 > APT50M80B2FLC 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT50M80B2FLC |
| 元件分类： | JFETs |
| 英文描述： | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 37K |
| 代理商： | APT50M80B2FLC |
ADVANCED
TECHNICAL
INFORMATION
DYNAMIC CHARACTERISTICS
APT50M80 B2FLC - LFLC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
MIN
TYP
MAX
6060
1220
230
170
31
89
12
13
34
7.1
UNIT
pF
nC
ns
MIN
TYP
MAX
58
232
1.3
5
Tj = 25°C
270
Tj = 125°C
540
Tj = 25°C
1.8
Tj = 125°C
6.2
Tj = 25°C
16
Tj = 125°C
29
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 1.78mH, RG = 25W, Peak IL = 58A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS -ID [Cont.], di/dt = 100A/s, Tj 150°C, RG = 2.0W, VR = 200V.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
MIN
TYP
MAX
0.20
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitter
Gate
Collector
Emitter
Gate
Collector
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
TO-264 (L) Package Outline
T-MAX (B2) Package Outline
These dimensions are equal to the TO-247 without the mounting hole.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
050-5934
rev-
12-99
相关PDF资料 |
PDF描述 |
|---|---|
| APT50M80LFLC | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M85JVR | 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50N60JCU3 | 52 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT55M65JFLL | 63 A, 550 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT55M65JFLL | 63 A, 550 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M80B2LC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M80B2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VFR_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VFRG | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT50M80B2VR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) T-MAX |
发布紧急采购，3分钟左右您将得到回复。