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参数资料
| 型号： | APT5513B2FLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 41 A, 550 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 93K |
| 代理商： | APT5513B2FLL |
050-7193
Rev
A
3-2003
DYNAMIC CHARACTERISTICS
APT5513B2FLL - LFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -41A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -41A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -41A, di/dt = 100A/s)
Peak Recovery Current
(IS = -41A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
41
164
1.3
15
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
2.16
Tj = 125°C
5.57
Tj = 25°C
15.5
Tj = 125°C
22.4
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.25
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.90mH, RG = 25, Peak IL = 41A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
41A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 275V
I
D
= 41A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 275V
I
D
= 41A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 367V, V
GS
= 15V
I
D
= 41A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 367V V
GS
= 15V
I
D
= 41A, R
G
= 5
MIN
TYP
MAX
4268
838
60
98
25
55
14
11
30
5
517
431
796
501
UNIT
pF
nC
ns
J
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5513JFLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.13Ohms ID(cont):35Amps|FREDFETs ( fast body diode) |
| APT5513LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5514DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 43A I(D) | CHIP |
| APT5514FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 43A I(D) | F-PACK SIP |
| APT5517AFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 550V V(BR)DSS | 39A I(D) |
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