- 您现在的位置：买卖IC网 > PDF目录36720 > APT55M50JFLL (MICROSEMI POWER PRODUCTS GROUP) 77 A, 550 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT55M50JFLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 77 A, 550 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 171K |
| 代理商： | APT55M50JFLL |
050-7229
Rev
A
6-2004
DYNAMIC CHARACTERISTICS
APT55M50JFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -77A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -77A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -77A, di/dt = 100A/s)
Peak Recovery Current
(IS = -77A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
77
308
1.3
15
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
2.2
Tj = 125°C
9.0
Tj = 25°C
16
Tj = 125°C
33
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 275V
I
D = 77A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 275V
I
D = 77A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 367V, VGS = 15V
I
D = 77A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 367V, VGS = 15V
I
D = 77A, RG = 5
MIN
TYP
MAX
12400
2215
70
265
70
120
26
17
55
12
1105
1230
1595
1465
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.21mH, RG = 25, Peak IL = 77A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ ID-77A
di/dt ≤ 700A/s V
R ≤ 550V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.20
0.16
0.12
0.08
0.04
0
0.5
0.1
0.3
0.7
0.9
0.05
相关PDF资料 |
PDF描述 |
|---|---|
| APT55M50JFLL | 77 A, 550 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT55M85B2FLL | 59 A, 550 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT55M85B2FLLG | 59 A, 550 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT55M85LFLL | 59 A, 550 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT55M85B2FLL | 59 A, 550 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT55M65JFLL | 功能描述:MOSFET N-CH 550V 63A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT55M65L2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT55M85B2FLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
| APT55M85JFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT55M85LFLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:550V RDS(ON)0.085Ohms ID(cont):59Amps|FREDFETs ( fast body diode) |
发布紧急采购，3分钟左右您将得到回复。