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参数资料
| 型号： | APT6013B2FLLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 146K |
| 代理商： | APT6013B2FLLG |
Typical Performance Curves
050-7071
Rev
B
9-2004
APT6013B2FLL_LFLL
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
160
140
120
100
80
60
40
20
0
45
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
120
100
80
60
40
20
0
1.2
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
8V
5.5V
6V
6.5V
7V
5V
VGS =15 &10V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
NORMALIZED TO
V
GS = 10V @ ID = 21.5A
I
D = 21.5A
V
GS = 10V
0.014
0.076
0.13
0.006F
0.019F
0.278F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT6013B2FLL | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6013LFLLG | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6013B2FLL | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6013LFLL | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6013LLLG | 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6013B2LL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6013B2LL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6013B2LLG | 功能描述:MOSFET N-CH 600V 43A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT6013JFLL | 功能描述:MOSFET N-CH 600V 39A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT6013JFLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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