参数资料
型号: APT6013JFLL
元件分类: JFETs
英文描述: 39 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 3/5页
文件大小: 166K
代理商: APT6013JFLL
050-7070
Rev
B
8-2004
Typical Performance Curves
APT6013JFLL
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
1
23
45
6
7
8
9
10
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
120
100
80
60
40
20
0
1.2
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
8V
5.5V
6V
6.5V
7V
5V
VGS =15 &10V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
NORMALIZED TO
V
GS = 10V @ ID = 19.5A
I
D = 19.5A
V
GS = 10V
160
140
120
100
80
60
40
20
0
40
35
30
25
20
10
15
5
0
2.5
2.0
1.5
1.0
0.5
0.0
0.0260
0.0584
0.185
0.0012F
0.0354F
0.463F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
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