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参数资料
| 型号： | APT6015B2VR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CLIP MOUNTED TO-247, TMAX-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 60K |
| 代理商： | APT6015B2VR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
50
100
150
200
250
300
0
4
8
12
16
20
0
2468
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT6015B2VR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
100
80
60
40
20
0
1.6
1.4
1.2
1.0
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
80
60
40
20
0
100
80
60
40
20
0
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
050-5612
Rev
B
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ < 0.5 % DUTY CYCLE
VGS=6V, 7V, 10V & 15V
VGS=10V
VGS=20V
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
5.5V
4.5V
5V
4V
5.5V
4.5V
5V
4V
VGS=6V, 7V, 10V & 15V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6015B2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT6015JFVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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| APT6015JVFR | 功能描述:MOSFET N-CH 600V 35A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT6015JVR | 功能描述:MOSFET N-CH 600V 35A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
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