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参数资料
| 型号： | APT6020B2VFR |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS V FREDFET |
| 中文描述： | 功率MOS V FREDFET |
| 文件页数： | 3/4页 |
| 文件大小： | 123K |
| 代理商： | APT6020B2VFR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
T
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
D
(
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
0
0
50
100
150
200
250
300
0
4
8
12
16
20
0
2
4
6
8
0
15
30
45
60
75
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
APT6020B2VFR_LVFR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
60
50
40
30
20
10
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VD250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=6V, 7V, 10V & 15V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
5.5V
4.5V
5V
5.5V
4.5V
5V
VGS = 7V, 10V & 15V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
60
50
40
30
20
10
0
100
50
40
30
20
10
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
6V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6020LVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT6020LVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6021BFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6021BFLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6021BFLLG | 功能描述:MOSFET N-CH 600V 29A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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