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参数资料
| 型号： | APT6024HLL |
| 元件分类： | JFETs |
| 英文描述： | 21 A, 600 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封装： | HERMETIC SEALED, TO-258, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 60K |
| 代理商： | APT6024HLL |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
600
.01
.1
1
10
50
0
20
40
60
80
100
120
0.3
0.5
0.7
0.9
1.1
1.3
1.5
84
10
1
16
12
8
4
0
APT6024HLL
050-7325
Rev
-
7-2002
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Crss
Ciss
Coss
TJ =+150°C
TJ =+25°C
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
10mS
1mS
100S
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
TO-258 Package Outline
5.08 (.200) BSC
1.14 (.045)
0.88 (.035)
17.65 (.695)
17.39 (.685)
4.19 (.165)
3.94 (.155)
Drain
Source
Gate
1.65 (.065)
1.39 (.055)
Dia. Typ.
3 Leads
17.96 (.707)
17.70 (.697)
19.05 (0.750)
12.70 (0.500)
21.21 (.835)
20.70 (.815)
8.89 (.350)
8.63 (.340)
Dimensions in Millimeters and (Inches)
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
13.84 (.545)
13.58 (.535)
相关PDF资料 |
PDF描述 |
|---|---|
| APT6025BFLL | 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6025SFLLG | 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6025BFLLG | 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6025SFLL | 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6025SFLL | 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6025BFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6025BFLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6025BFLLG | 功能描述:MOSFET N-CH 600V 24A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT6025BLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6025BLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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