参数资料
型号: APT6025BVRG
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 25 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件页数: 4/4页
文件大小: 62K
代理商: APT6025BVRG
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT6025BVR
050-5505
Rev
C
1
5
10
50 100
600
.01
.1
1
10
50
0
50
100
150
200
250
300
350
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
50
10
5
1
0.5
0.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
15,000
10,000
5,000
1,000
500
100
50
10
5
1
VDS=120V
VDS=480V
I
D
= I
D
[Cont.]
10
S
1mS
10mS
100mS
DC
100
S
VDS=300V
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
TO-247 Package Outline
相关PDF资料
PDF描述
APT6025BVR 25 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT6025SLL 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6025BLLG 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6025SLL 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6025BLL 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相关代理商/技术参数
参数描述
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