参数资料
型号: APT6025SFLLG
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: D3PAK-3
文件页数: 4/5页
文件大小: 166K
代理商: APT6025SFLLG
050-7066
Rev
B
9-2004
APT6025BFLL_SFLL
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
10,000
1,000
100
10
200
100
10
1
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
600
0
10
20
30
40
50
0
10 20 30 40 50 60 70 80 90 100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
96
50
10
1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=300V
VDS=120V
VDS=480V
I
D = 24A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
0
10203040
0
10
20
30
40
0
5
10
15
20
25
30
35
40
0
5
10 15 20 25 30
35 40 45 50
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 400V
I
D = 24A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
V
DD = 400V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
相关PDF资料
PDF描述
APT6025BFLLG 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6025SFLL 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6025SFLL 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6025BFLL 24 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6025BVFRG 25 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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