- 您现在的位置：买卖IC网 > PDF目录36723 > APT6035BVFR 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF资料下载
参数资料
| 型号： | APT6035BVFR |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 121K |
| 代理商： | APT6035BVFR |
050-7269
Rev
A
7-2004
Typical Performance Curves
APT6035BVFR_SVFR
0
50
100
150
200
250
300
0
5
10
15
20
25
0
2
4
6
8
0
10
20
30
40
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
I
D = 0.5 ID [Cont.]
V
GS = 10V
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
50
40
30
20
10
0
20
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
5V
VGS=7V, 10V & 15V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V & 15V
5.5V
4.5V
5V
5.5V
6V
6.5V
7V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE2,TYPICALOUTPUTCHARACTERISTICS
FIGURE3,TYPICALOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
相关PDF资料 |
PDF描述 |
|---|---|
| APT6035SVFRG | 18 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6038BLL | 17 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6038SLL | 17 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6038SLL | 17 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6038BLL | 17 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6035BVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT6035BVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6035BVRG | 功能描述:MOSFET N-CH 600V 18A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT6035SVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT6035SVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
发布紧急采购，3分钟左右您将得到回复。