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参数资料
| 型号： | APT6040SVR |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 59K |
| 代理商： | APT6040SVR |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current 2 (V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance 2
(V
GS
= 10V, 8A)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
050-7263
Rev
-
2-2003
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
600
16
0.40
25
250
±100
24
APT6040BVR
600
16
64
±30
±40
250
2
-55 to 150
300
16
30
960
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
Avalanche Energy Rated
Lower Leakage
Popular TO-247 Package
G
D
S
POWER MOS V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT6040BVR
APT6040SVR
600V 16A 0.400
TO-247
D3PAK
BVR
SVR
相关PDF资料 |
PDF描述 |
|---|---|
| APT6040BVR | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6045BNR | 17 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6040BNR | 18 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6045BVFR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT6045SVFR | 15 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6045AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 14.5A I(D) | TO-3 |
| APT6045BN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6045BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 19A I(D) | TO-247 |
| APT6045BVFR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045BVFRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
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