参数资料
型号: APT60DQ60SG
厂商: Advanced Power Technology Ltd.
英文描述: ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
中文描述: 超快软恢复整流二极管
文件页数: 1/4页
文件大小: 139K
代理商: APT60DQ60SG
0
PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular TO-247 Package or
Surface Mount D
3
PAK Package
Low Forward Voltage
Low Leakage Current
Avalanche Energy Rated
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
Snubber Diode
PFC
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
600V 60A
APT60DQ60B
APT60DQ60BG* APT60DQ60SG*
APT60DQ60S
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
μ
A
pF
MIN
TYP
MAX
2.0
2.4
2.44
1.7
25
500
75
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 60A
I
F
= 120A
I
F
= 60A, T
J
= 125°C
V
R
= 600V
V
R
= 600V, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 110°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
UNIT
Volts
Amps
mJ
°C
APT60DQ60B_S(G)
600
60
94
600
20
-55 to 175
300
1 - Cathode
2 - Anode
Back of Case -Cathode
1
2
TO-247
1
2
D
3
PAK
1
2
(S)
(B)
相关PDF资料
PDF描述
APT60GF120JRDQ3 FAST IGBT & FRED
APT60GF120JRD The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT60GF60JU3 ISOTOP Buck chopper NPT IGBT
APT60GT60JRDQ3 Thunderbolt IGBT
APT60GU30B POWER MOS 7 IGBT
相关代理商/技术参数
参数描述
APT60DS04HJ 制造商:Microsemi Corporation 功能描述:MOD DIODE 400V SOT-227
APT60DS10HJ 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module
APT60DS20HJ 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module
APT60GA60JD60 功能描述:IGBT 600V 112A 356W SOT-227 RoHS:是 类别:半导体模块 >> IGBT 系列:POWER MOS 8™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APT60GF120JRD 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs.