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参数资料
| 型号： | APT60GF120JRD |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 2/4页 |
| 文件大小： | 51K |
| 代理商： | APT60GF120JRD |
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT60GF120JRD
UNIT
°
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.24
0.66
40
1.03
29.2
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine
)
Symbol
R
Θ
JC
R
Θ
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
GE
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
G
= 5
Inductive Switching (150
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
G
= 5
T
J
= +150
°
C
Inductive Switching (25
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5
T
J
= +25
°
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
7200
9600
790
1100
420
630
690
55
390
60
205
295
210
55
130
750
80
9
10
19
55
145
650
70
17
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
4
Turn-off Switching Energy
Total Switching Losses
4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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| APT60GF120JRDQ3 | 功能描述:IGBT 1200V 149A 625W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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