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| 型号： | APT60GF120JRDQ3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | FAST IGBT & FRED |
| 中文描述： | 快速IGBT |
| 文件页数： | 9/9页 |
| 文件大小： | 456K |
| 代理商： | APT60GF120JRDQ3 |
0
APT60GF120JRDQ3
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30
μ
H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT10035LLL
SOT-227 (ISOTOP
) Package Outline
PT’s products are covered by one or more of U.S.patents 4,895,810 5045,903 5089,434 5182,234 5019,522
5,262,336 6503,786 5256,583 4748,103 5283,202 5231,474 5434,095 5528,058 and foreign patents. US and Foreign patents pending. Al Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter/Anode
Collector/Cathode
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter/Anode
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT60GF60JU2 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT60GF60JU3 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT60GL120JU2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP? Boost chopper Trench + Field Stop IGBT4 Power module |
| APT60GL120JU2_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP?? Boost chopper Trench Field Stop IGBT4 Power module |
| APT60GL120JU3 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Buck chopper Trench + Field Stop IGBT4 Power module |
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