- 您现在的位置：买卖IC网 > PDF目录36724 > APT60GU30B 100 A, 300 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT60GU30B |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 300 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 167K |
| 代理商： | APT60GU30B |
050-7464
Rev
A
3-2004
APT60GU30B_S
TYPICAL PERFORMANCE CURVES
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
0
0.5
1
1.5
2
0
0.5
1
1.5
2
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
5
6
7
8
9 10 11 12 13 14 15 16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TC=-55°C
TC=125°C
TC=25°C
VCE = 240V
VCE = 150V
VCE = 60V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 30A
TJ = 25°C
TJ = -55°C
TJ = 125°C
TC=-55°C
TC=25°C
TC=125°C
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 15A
IC = 30A
IC = 60A
IC= 60A
IC= 30A
IC= 15A
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
4
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
2
1.5
1.0
0.5
0
160
140
120
100
80
60
40
20
0
LeadTemperature
Limited
相关PDF资料 |
PDF描述 |
|---|---|
| APT60M60JFLL | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M60JFLL | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M60JLL | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M60JLL | 70 A, 600 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M75JFLL | 58 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT60GU30S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT60M60JFLL | 功能描述:MOSFET N-CH 600V 70A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT60M60JFLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT60M60JLL | 功能描述:MOSFET N-CH 600V 70A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT60M60JLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
发布紧急采购，3分钟左右您将得到回复。