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参数资料
| 型号： | APT60M80L2VR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 65 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 164K |
| 代理商： | APT60M80L2VR |
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT60M80L2VR
600V 65A 0.080
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
050-5991
Rev
B
6-2004
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
TO-264 MAX Package
Avalanche Energy Rated
Faster Switching
Lower Leakage
TO-264
Max
L2VR
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
APT60M80L2VR
600
65
260
±30
±40
833
6.67
-55 to 150
300
65
50
3200
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 32.5A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5mA)
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
600
0.080
25
250
±100
24
POWER MOS V MOSFET
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT60M80L2VR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V㈢ MOSFET |
| APT60M80L2VRG | 功能描述:MOSFET N-CH 600V 65A TO-264MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT60M90BFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 600V V(BR)DSS | 63A I(D) |
| APT60M90DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | CHIP |
| APT60M90JN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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