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参数资料
| 型号： | APT77N60BC6 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 77 A, 600 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 144K |
| 代理商： | APT77N60BC6 |
050-7210
Rev
A
8-2010
APT77N60BC6
APT77N60SC6
600V
77A 0.041
Ω
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Popular TO-247 or Surface Mount D
3 package.
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
G
D
S
TO-247
D3PAK
MAXIMUM RATINGS
All Ratings per die: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
STATIC ELECTRICAL CHARACTERISTICS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
Microsemi Website - http://www.microsemi.com
Symbol
Parameter
APT77N60B_SC6
UNIT
V
DSS
Drain-Source Voltage
600
Volts
I
D
Continuous Drain Current @ T
C = 25°C
77
Amps
Continuous Drain Current @ T
C = 100°C
49
I
DM
Pulsed Drain Current 1
272
V
GS
Gate-Source Voltage Continuous
±
20
Volts
P
D
Total Power Dissipation @ T
C = 25°C
481
Watts
T
J,TSTG
Operating and Storage Junction Temperature Range
- 55 to 150
°C
T
L
Lead Temperature: 0.063" from Case for 10 Sec.
300
I
AR
Avalanche Current 2
13.4
Amps
E
AR
Repetitive Avalanche Energy 2 ( Id =13.4A, Vdd = 50V )
2.96
mJ
E
AS
Single Pulse Avalanche Energy
( Id = 13.4A, Vdd = 50V )
1954
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BV
(DSS)
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250μA)
600
Volts
R
DS(on)
Drain-Source On-State Resistance 3 (V
GS = 10V, ID = 44.4A)
.037
.041
Ohms
I
DSS
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V, TC = 25°C)
25
μA
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V, TC = 150°C)
250
I
GSS
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS = VGS, ID = 2.96mA)
2.5
3
3.6
Volts
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