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参数资料
| 型号： | APT77N60SC6 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 77 A, 600 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 144K |
| 代理商： | APT77N60SC6 |
APT77N60B_SC6
Typical Performance Curves
0
1000
2000
3000
4000
5000
6000
7000
0
10
20
30
40
50
0
50
00
50
00
0
25
50
75
100
125
1
10
100
350
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
50
100
150
200
250
300
350
400
0
25
50
75
100
125
0
2
4
6
8
10
12
14
0
50
100 150
200
250 300
350
10
100
1000
10,000
12,000
0
10
20
30
40
50
0
C
iss
T
J = =25°C
V
DS= 480V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
C,
CAP
ACIT
ANCE
(pF)
V
DS= 300V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I
D (A)
FIGURE 13, Delay Times vs Current
t d(on)
and
t
d(of
f)
(ns)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
I DR
,REVERSE
DRAIN
CURRENT
(A)
I
D (A)
FIGURE 14 , Rise and Fall Times vs Current
t r,
and
t
f
(ns)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
SWITCHING
ENERGY
(uJ)
0
1000
2000
3000
4000
5000
6000
10
30
50
70
90
110
130
I
D (A)
FIGURE 15, Switching Energy vs Current
SWITCHING
ENERGY
(
μ
J)
C
oss
C
rss
T
J= +150°C
I
D = 77A
V
DD = 400V
R
G = 5.0 Ω
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 400V
R
G = 5.0 Ω
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 400V
R
G = 5.0Ω
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 77A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
V
DS= 120V
050-7210
Rev
A
8-2010
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