参数资料
型号: APT802R8KN
元件分类: JFETs
英文描述: 4.4 A, 800 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 1/4页
文件大小: 39K
代理商: APT802R8KN
Junction to Case
Junction to Ambient
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
RθJC
RθJA
T
L
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°C)
Gate-Source Leakage Current (V
GS
=
±30V, V
DS
= 0V)
On State Drain Current 2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Static Drain-Source On-State Resistance 2
(V
GS
= 10V, I
D
= 0.5 I
D
[Cont.])
STATIC ELECTRICAL CHARACTERISTICS
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°C, Derate Above 25°C
Operating and Storage Junction Temperature Range
G
D
1.00
°C/W
80
°C/W
300
°C
APT802R4KN
800V 4.7A 2.40
APT802R8KN
800V 4.4A 2.80
Symbol Characteristic
MIN
TYP
UNIT
MAX
Symbol
Parameter
All Ratings: T
C
= 25
°C unless otherwise specified.
MAXIMUM RATINGS
S
APT802R4KN
APT802R8KN
UNIT
800
Volts
4.7
4.4
Amps
18.8
17.6
Amps
±30
Volts
125
Watts
-55 to 150
°C
THERMAL CHARACTERISTICS
A
TYP
MIN
MAX
UNIT
Symbol Characteristic / Test Conditions / Part Number
BV
DSS
I
DSS
I
GSS
I
D
(ON)
V
GS
(TH)
R
DS
(ON)
APT802R4KN
800
Volts
APT802R8KN
800
Volts
250
1000
±100
nA
APT802R4KN
4.7
Amps
APT802R8KN
4.4
Amps
24
Volts
APT802R4KN
2.40
Ohms
APT802R8KN
2.80
Ohms
TO-220
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
050-8036
Rev
D
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-802 8
FAX: (541) 388-036 4
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
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