参数资料
型号: APT8030B2VRG
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: CLIP MOUNTED TO-247, TMAX-3
文件页数: 3/4页
文件大小: 58K
代理商: APT8030B2VRG
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
100
200
300
400
0
4
8
12
16
0
2468
0
10
20
30
40
50
60
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT8030B2VR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
100
80
60
40
20
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
050-5613
Rev
B
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
5V
4.5V
4V
VGS=5.5V, 6V, 7V, 10V & 15V
5V
4.5V
4V
VGS=15V
VGS=10V
VGS=20V
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=5.5V, 6V & 7V
VGS=10V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相关PDF资料
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APT8030B2VR 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
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