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参数资料
| 型号： | APT8052SFLL |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 800 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 160K |
| 代理商： | APT8052SFLL |
050-7059
Rev
B
7-2004
APT8052BFLL_SFLL
Typical Performance Curves
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
800
0
10
20
30
40
50
0
20
40
60
80
100
120
0.3
0.5
0.7
0.9
1.1
1.3
1.5
60
10
5
1
.5
.1
16
12
8
4
0
7,000
1,000
100
10
100
10
1
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
VDS=250V
VDS=100V
VDS=400V
I
D = 15A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
5
10152025
5
10
15
20
25
5
10
15
20
25
0
5
10 152025 30 35 40 45 50
V
DD = 533V
I
D = 15A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
60
50
40
30
20
10
0
700
600
500
400
300
200
100
0
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
35
30
25
20
15
10
5
0
1000
800
600
400
200
0
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相关代理商/技术参数 |
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|---|---|
| APT8052SFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
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| APT8056BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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