型号: | APT8058HVR |
元件分类: | JFETs |
英文描述: | 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258 |
封装: | TO-258, 3 PIN |
文件页数: | 1/2页 |
文件大小: | 491K |
代理商: | APT8058HVR |
相关PDF资料 |
PDF描述 |
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APT20M26WVR | 65 A, 200 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267 |
APT5019HVR | 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258 |
APT5012WVR | 40 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267 |
APT10025PVR | 33 A, 1000 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
APT5026HVR | 18.5 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258 |
相关代理商/技术参数 |
参数描述 |
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APT8065 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
APT8065AVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
APT8065BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
APT8065BVFR_05 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
APT8065BVFRG | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |