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参数资料
| 型号： | APT8065AVR |
| 元件分类： | JFETs |
| 英文描述： | 11.2 A, 800 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 53K |
| 代理商： | APT8065AVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
APT8065AVR
050-5823
Rev
B
9-2001
0
100
200
300
400
0
2468
10
12
0
2468
0
5
10
15
20
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
16
12
8
4
0
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
16
12
8
4
0
30
24
18
12
6
0
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
4V
VGS=5V, 5.5V, 6V, 7V, 10V & 15V
4.5V
4V
VGS=10V
VGS=20V
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=6V, 7V, 10V & 15V
VGS=5V & 5.5V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT8065BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8065BVFR_05 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8065BVFRG | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT8065BVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8065BVRG | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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