参数资料
型号: APT8067HVR
厂商: Advanced Power Technology Ltd.
英文描述: Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述: 电源MOS V是一个高电压N新一代通道增强型功率MOSFET。
文件页数: 4/4页
文件大小: 60K
代理商: APT8067HVR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
APT8067HVR
0
1
5
10
50 100
800
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
50
10
5
1
.5
.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
TJ =+150
°
C
TJ =+25
°
C
Crss
Coss
Ciss
15,000
10,000
5,000
1,000
500
100
50
10
5
1
.5
.1
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
10
μ
S
1mS
10mS
100mS
DC
100
μ
S
VDS=250V
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
TO-258 Package Outline
5.08 (.200) BSC
1.14 (.045)
0.88 (.035)
17.65 (.695)
17.39 (.685)
4.19 (.165)
3.94 (.155)
Drain
Source
Gate
1.65 (.065)
1.39 (.055)
Dia. Typ.
3 Leads
17.96 (.707)
17.70 (.697)
19.05 (0.750)
12.70 (0.500)
21.21 (.835)
20.70 (.815)
8.89 (.350)
8.63 (.340)
Dimensions in Millimeters and (Inches)
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
13.84 (.545)
13.58 (.535)
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