参数资料
型号: APT80GP60JDQ3
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 151 A, 600 V, N-CHANNEL IGBT
封装: ISOTOP-4 PIN
文件页数: 1/9页
文件大小: 230K
代理商: APT80GP60JDQ3
050-7442
Rev
A
6-2005
APT80GP60JDQ3
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 1250A)
Gate Threshold Voltage (V
CE = VGE, I C = 2.5mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 80A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 80A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT80GP60JDQ3
600
±30
151
68
330
330A @ 600V
462
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3.0
4.5
6.0
2.2
2.7
2.1
1250
5500
±100
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 400V, 39A
Low Gate Charge
50 kHz operation @ 400V, 59A
Ultrafast Tail Current shutoff
SSOA Rated
POWER MOS 7 IGBT
C
E
G
600V
APT80GP60JDQ3
SO
T-2
27
ISOTOP
file # E145592
"UL Recognized"
G
E
C
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