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参数资料
| 型号： | APTC60DHM24T3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 95 A, 600 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 240K |
| 代理商： | APTC60DHM24T3G |
APTC60DHM24T3G
APT
C
60DHM
24T3G
–
Rev
1
August,
2009
www.microsemi.com
2- 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
350
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
600
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 47.5A
24
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14.4
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
17
nF
Qg
Total gate Charge
300
Qgs
Gate – Source Charge
68
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 95A
102
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
45
ns
Eon
Turn-on Switching Energy
1350
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1040
J
Eon
Turn-on Switching Energy
2200
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1270
J
Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
25
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
60
A
IF = 60A
1.7
2.3
IF = 120A
2
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
70
trr
Reverse Recovery Time
Tj = 125°C
140
ns
Tj = 25°C
100
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/s
Tj = 125°C
690
nC
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