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参数资料
| 型号： | APTC60DSKM35T3 |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 2/6页 |
| 文件大小： | 338K |
| 代理商： | APTC60DSKM35T3 |
APTC60DSKM35T3
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2004
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
1
40
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 72A
35
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5.4mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14
Coss
Output Capacitance
5.13
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
518
Qgs
Gate – Source Charge
58
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 72A
222
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5
84
ns
Eon
Turn-on Switching Energy
1340
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
1960
J
Eon
Turn-on Switching Energy
2192
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
2412
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
60
A
IF = 60A
2.2
2.7
IF = 120A
2.3
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
55
trr
Reverse Recovery Time
Tj = 125°C
151
ns
Tj = 25°C
121
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt=200A/s
Tj = 125°C
999
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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| APTC60DSKM35T3 | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DSKM35T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DSKM45CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DSKM45T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DSKM70CT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC60DSKM70T1G | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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