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参数资料
| 型号： | APTC60DSKM70T3 |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 2/6页 |
| 文件大小： | 338K |
| 代理商： | APTC60DSKM70T3 |
APTC60DSKM70T3
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APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
0.5
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 39A
70
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.7mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7
Coss
Output Capacitance
2.56
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.21
nF
Qg
Total gate Charge
259
Qgs
Gate – Source Charge
29
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
111
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5
84
ns
Eon
Turn-on Switching Energy
670
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
980
J
Eon
Turn-on Switching Energy
1096
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
1206
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
750
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
30
A
IF = 30A
2.2
2.7
IF = 60A
2.7
VF
Diode Forward Voltage
IF = 30A
Tj = 150°C
1.5
V
Tj = 25°C
74
trr
Reverse Recovery Time
Tj = 100°C
74
ns
Tj = 25°C
123
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt=200A/s
Tj = 100°C
288
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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