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参数资料
| 型号： | APTC80DSK29T3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual buck chopper Super Junction MOSFET Power Module |
| 中文描述： | 双降压斩波超级结MOSFET的功率模块 |
| 文件页数： | 4/6页 |
| 文件大小： | 345K |
| 代理商： | APTC80DSK29T3 |
APTC80DSK29T3
AP
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C
80
D
S
K
29T
3
–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
10
20
30
40
50
01
2345678
VGS, Gate to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
5
10
15
20
25
30
ID, Drain Current (A)
R
DS
(o
n
)
D
rai
n
t
o
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 7.5A
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dr
a
in
C
u
rr
e
n
t(
A
)
DC Drain Current vs Case Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC80DSK29T3G | 功能描述:MOSFET MOD DUAL BUCK CHOP SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC80H15T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC80H15T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC80H29SCT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| APTC80H29SCTG | 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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