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参数资料
| 型号： | APTC80H29SCT |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 319K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
PT
C
80H
29S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
1 – 7
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3B
CR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
V
Tc = 25°C
15
ID
Continuous Drain Current
Tc = 80°C
11
IDM
Pulsed Drain current
60
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
290
m
W
PD
Maximum Power Dissipation
Tc = 25°C
156
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
0.5
EAS
Single Pulse Avalanche Energy
670
mJ
VDSS = 800V
RDSon = 290m
W max @ Tj = 25°C
ID = 15A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
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相关代理商/技术参数 |
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|---|---|
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