参数资料
型号: APTC80TDU15P
厂商: Advanced Power Technology Ltd.
英文描述: Triple dual Common Source Super Junction MOSFET Power Module
中文描述: 三双共源超结MOSFET的功率模块
文件页数: 4/6页
文件大小: 339K
代理商: APTC80TDU15P
APTC80TDU15P
A
P
T
C
80T
D
U
15P
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001
0.0001
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
012345678
VGS, Gate to Source Voltage (V)
I D
,D
ra
in
C
u
rr
e
nt
(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10
203040
5060
ID, Drain Current (A)
R
DS
(o
n
)
D
rai
n
t
o
S
o
u
rce
O
N
R
esi
st
an
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Normalized to
VGS=10V @ 14A
0
5
10
15
20
25
30
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dr
a
in
C
u
rr
e
n
t(
A
)
DC Drain Current vs Case Temperature
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