- 您现在的位置：买卖IC网 > PDF目录36729 > APTC90AM60SCTG (MICROSEMI POWER PRODUCTS GROUP) 59 A, 900 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTC90AM60SCTG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 59 A, 900 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP4, 10 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 209K |
| 代理商： | APTC90AM60SCTG |
APTC90AM60SCTG
APT
C
90AM
60SCT
G
–
Rev
0
Au
gust,
2009
www.microsemi.com
1 – 6
.
NTC2
OUT
VBUS
NTC1
0/VBU S
Q1
G1
Q2
S1
S2
G2
NTC2
S1
OUT
NTC1
VBUS
0/VBUS
G2
S2
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
900
V
Tc = 25°C
59
ID
Continuous Drain Current
Tc = 80°C
44
IDM
Pulsed Drain current
150
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
60
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
462
W
IAR
Avalanche current (repetitive and non repetitive)
8.8
A
EAR
Repetitive Avalanche Energy
2.9
EAS
Single Pulse Avalanche Energy
1940
mJ
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VDSS = 900V
RDSon = 60mΩ max @ Tj = 25°C
ID = 59A @ Tc = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| APTC90AM60T1G | 59 A, 900 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90DDA12CT1G | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90H12SCTG | 30 A, 900 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90HM60T3G | 59 A, 900 V, 0.06 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTCV40H60CT1G | IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC90AM60T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90DAM60CT1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC90DAM60T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90DDA12CT1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Dual boost chopper Super Junction MOSFET SiC chopper diode |
| APTC90DDA12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
发布紧急采购，3分钟左右您将得到回复。