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参数资料
| 型号： | APTC90DAM60CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 220K |
| 代理商： | APTC90DAM60CT1G |
APTC90DAM60CT1G
APT
C
90DAM
60C
T
1G
–
Rev
1
Ju
ly,
2009
www.microsemi.com
5 – 6
Hard
switching
ZCS
ZVS
0
100
200
300
400
20
25
30
35
40
45
50
ID, Drain Current (A)
Fr
eque
nc
y
(k
Hz)
Operating Frequency vs Drain Current
VDS=600V
D=50%
RG=3.8
TJ=125°C
TC=75°C
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
10
20
30
40
50
60
70
80
ID, Drain Current (A)
E
o
n
and
E
o
ff
(m
J)
VDS=600V
RG=3.8
TJ=125°C
L=100H
ON resistance vs Temperature
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
D
S
(on)
,Dr
ai
n
to
S
o
u
rce
ON
r
esi
stan
ce
(N
o
rm
a
li
z
e
d
)
Switching Energy vs Gate Resistance
Eon
Eoff
0
1
2
3
4
5
6
0
5
10
15
20
Gate Resistance (Ohms)
Switc
h
ing
Ener
gy
(mJ
)
VDS=600V
ID=52A
TJ=125°C
L=100H
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PDF描述 |
|---|---|
| APTC90DAM60T1G | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC90DSK12CT1G | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90DSK12T1G | 30 A, 900 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90H12T1G | 30 A, 900 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC90SKM60CT1G | 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC90DAM60T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90DDA12CT1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Dual boost chopper Super Junction MOSFET SiC chopper diode |
| APTC90DDA12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC90DSK12CT1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Dual buck chopper Super Junction MOSFET SiC chopper diode |
| APTC90DSK12T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
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