参数资料
型号: APTC90DAM60T1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 59 A, 900 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 3/5页
文件大小: 203K
代理商: APTC90DAM60T1G
APTC90DAM60T1G
APT
C
90DAM
60T1G
Rev
0
August,
200
9
www.microsemi.com
3 – 5
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
CoolMOS
0.27
RthJC
Junction to Case Thermal Resistance
diode
0.9
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
R25/R25
5
%
B25/85
T25 = 298.15 K
3952
K
B/B
TC=100°C
4
%
=
T
B
R
T
1
exp
25
85
/
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料
PDF描述
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