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参数资料
| 型号： | APTGF100DU120T |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-12 |
| 文件页数： | 5/6页 |
| 文件大小： | 301K |
| 代理商： | APTGF100DU120T |
APTGF100DU120T
A
PT
G
F100D
U
120T
–
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
5- 6
VGE = 15V
25
30
35
40
45
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
td
(o
n)
,Tur
n
-O
n
D
el
ay
Ti
m
e
(
n
s)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 2.5
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
t
d
(o
ff
),
T
u
rn
-O
ff
De
la
y
T
im
e
(
n
s)
VCE = 600V
RG = 2.5
VGE=15V
20
60
100
140
180
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
tr
,R
is
eT
ime
(
n
s)
Current Rise Time vs Collector Current
VCE = 600V
RG = 2.5
TJ = 25°C
TJ = 125°C
20
30
40
50
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
tf
,F
a
ll
T
ime
(
n
s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 2.5
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
8
16
24
32
40
48
56
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on,
Tur
n
-O
n
E
n
er
gy
Los
s
(
m
J
)
VCE = 600V
RG = 2.5
TJ = 25°C
TJ = 125°C
0
4
8
12
16
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
E
o
ff,
T
u
rn
-o
ff
E
n
e
rg
yL
o
ss
(m
J)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 2.5
Eon, 100A
Eoff, 100A
Eon, 50A
Eoff, 50A
0
4
8
12
16
20
24
28
32
36
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
e
rg
yL
o
ss
es
(
m
J)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
Eon, 100A
Eoff, 100A
Eon, 50A
Eoff, 50A
0
4
8
12
16
0
255075
100
125
TJ, Junction Temperature (°C)
S
w
it
ch
in
g
E
n
er
gy
Los
s
es
(
m
J
)
Switching Energy Losses vs Junction Temp.
VCE = 600V
V
GE = 15V
RG = 2.5
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF100DU120T | 150 A, 1200 V, N-CHANNEL IGBT |
| APTGF100SK120T | 150 A, 1200 V, N-CHANNEL IGBT |
| APTGF100SK120T | 150 A, 1200 V, N-CHANNEL IGBT |
| APTGF10X120E2 | 15 A, 1200 V, N-CHANNEL IGBT |
| APTGF10X120P2 | 15 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF100DU120TG | 功能描述:IGBT MODULE NPT DUAL 1200V SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF100SK120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module |
| APTGF100SK120TG | 功能描述:IGBT 1200V 135A 568W SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF10X120E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF10X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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