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参数资料
| 型号： | APTGF100DU120T |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-12 |
| 文件页数： | 2/6页 |
| 文件大小： | 301K |
| 代理商： | APTGF100DU120T |
APTGF100DU120T
A
PT
G
F100D
U
120T
–
R
ev
1
M
ar
ch,
2004
APT website – http://www.advancedpower.com
2- 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 750 A
1200
V
Tj = 25°C
750
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
3750
A
Tj = 25°C
3.2
3.7
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 100A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 2 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20 V, VCE = 0V
150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
6900
Coes
Output Capacitance
660
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
440
pF
Qg
Total gate Charge
660
Qge
Gate – Emitter Charge
70
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 100A
400
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
320
Tf
Fall Time
30
ns
Eon
Turn-on Switching Energy
u
10.8
Eoff
Turn-off Switching Energy
v
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 100A
RG = 2.5
W
4.6
mJ
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
u
13.9
Eoff
Turn-off Switching Energy
v
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 100A
RG = 2.5
W
6.1
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
120
A
IF = 120A
2.0
2.5
IF = 240A
2.3
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
1.8
V
Tj = 25°C
370
trr
Reverse Recovery Time
IF = 120A
VR = 800V
di/dt =800A/s
Tj = 125°C
500
ns
Tj = 25°C
2.64
Qrr
Reverse Recovery Charge
IF = 120A
VR = 800V
di/dt =800A/s
Tj = 125°C
13.8
C
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
相关PDF资料 |
PDF描述 |
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| APTGF100SK120T | 150 A, 1200 V, N-CHANNEL IGBT |
| APTGF100SK120T | 150 A, 1200 V, N-CHANNEL IGBT |
| APTGF10X120E2 | 15 A, 1200 V, N-CHANNEL IGBT |
| APTGF10X120P2 | 15 A, 1200 V, N-CHANNEL IGBT |
| APTGF10X120P2G | 15 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF100DU120TG | 功能描述:IGBT MODULE NPT DUAL 1200V SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF100SK120T | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Buck chopper NPT IGBT Power Module |
| APTGF100SK120TG | 功能描述:IGBT 1200V 135A 568W SP4 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF10X120E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF10X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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