参数资料
型号: APTGF125X60E3
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 180 A, 600 V, N-CHANNEL IGBT
封装: MODULE-33
文件页数: 1/3页
文件大小: 210K
代理商: APTGF125X60E3
APTGF125X60E3
A
PT
G
F1
25
X
60
E3
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
180
IC
Continuous Collector Current
TC = 80°C
125
ICM
Pulsed Collector Current
TC = 25°C
350
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
570
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
300A@480V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
VCES = 600V
IC = 125A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
相关PDF资料
PDF描述
APTGF125X60TE3 180 A, 600 V, N-CHANNEL IGBT
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