- 您现在的位置：买卖IC网 > PDF目录51270 > APTGF150X60E3G (MICROSEMI POWER PRODUCTS GROUP) 225 A, 600 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APTGF150X60E3G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 225 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-33 |
| 文件页数： | 2/3页 |
| 文件大小： | 210K |
| 代理商： | APTGF150X60E3G |
APTGF150X60E3
A
PT
G
F1
50
X
60
E3
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 3
Electrical Characteristics
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.7
2.0
2.5
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 200A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 4 mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
9000
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
800
pF
Td(on)
Turn-on Delay Time
163
Tr
Rise Time
43
Td(off)
Turn-off Delay Time
253
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5
33
ns
Td(on)
Turn-on Delay Time
180
Tr
Rise Time
49
Td(off)
Turn-off Delay Time
285
Tf
Fall Time
41
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 1.5
6.3
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 200A
VGE = 0V
Tj = 125°C
1.2
V
Er
Reverse Recovery Energy
IF = 200A
VR = 300V
di/dt =800A/s
Tj = 125°C
4.1
mJ
Tj = 25°C
13
Qrr
Reverse Recovery Charge
IF = 200A
VR = 300V
di/dt =800A/s Tj = 125°C
20
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.18
RthJC
Junction to Case
Diode
0.32
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To heatsink
M5
3
4.5
N.m
Wt
Package Weight
300
g
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF15A120T1G | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF180DA60T | 220 A, 600 V, N-CHANNEL IGBT |
| APTGF180DA60T | 220 A, 600 V, N-CHANNEL IGBT |
| APTGF180SK60T | 220 A, 600 V, N-CHANNEL IGBT |
| APTGF180SK60T | 220 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF150X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15A120T1G | 功能描述:IGBT MODULE NPT PHASE 1200V SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF15H120T1G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF15H120T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF15H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
发布紧急采购，3分钟左右您将得到回复。