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参数资料
| 型号： | APTGF15H120T3 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-25 |
| 文件页数： | 5/6页 |
| 文件大小： | 320K |
| 代理商： | APTGF15H120T3 |
APTGF15H120T3
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APT website – http://www.advancedpower.com
5 - 6
VGE = 15V
50
55
60
65
70
75
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
td
(o
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O
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D
el
a
y
T
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Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 33
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
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T
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-O
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D
e
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T
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VCE = 600V
RG = 33
VGE=15V
0
40
80
120
160
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
tr
,R
ise
T
im
e
(
n
s)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
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a
ll
T
im
e
(
n
s
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Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 33
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
o
n,
T
u
rn
-O
n
E
n
e
rg
y
Lo
s
s(
m
J
)
VCE = 600V
RG = 33
TJ = 25°C
TJ = 125°C
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
E
o
ff
,T
u
rn
-o
ff
E
n
e
rg
y
L
o
ss
(m
J
)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 33
Eon, 15A
Eoff, 15A
0
1
2
3
4
5
6
7
8
0
20406080
100
120
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
L
o
sses
(
m
J)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
5
10
15
20
25
30
35
0
400
800
1200
I C
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o
lle
ct
o
rC
u
rr
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Minimum Switching Safe Operating Area
VCE, Collector to Emitter Voltage (V)
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF15H120T3 | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120P2 | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120P2G | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120E2 | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120P2 | 25 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF15H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF15X120E2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF15X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X120P2 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF15X120P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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