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参数资料
| 型号： | APTGF15X120P2 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MODULE-17 |
| 文件页数： | 2/4页 |
| 文件大小： | 244K |
| 代理商： | APTGF15X120P2 |
APTGF15X120E2
APTGF15X120P2
A
PT
G
F1
5X
12
0E
2(
P2
)–
R
ev
0
N
ov
em
be
r,
20
03
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
1200
V
Tj = 25°C
300
500
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
1200
A
Tj = 25°C
2.5
3.0
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 15A
Tj = 125°C
3.1
3.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.6 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
1000
Coes
Output Capacitance
150
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
70
pF
Td(on)
Turn-on Delay Time
55
110
Tr
Rise Time
45
90
Td(off)
Turn-off Delay Time
400
600
Tf
Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 15A
RG = 82
70
100
ns
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
2.4
2.9
VF
Diode Forward Voltage
IF = 15A
VGE = 0V
Tj = 125°C
1.9
V
trr
Reverse Recovery Time
IF = 15A
VR = 600V
di/dt =800A/s
Tj = 125°C
0.1
s
Tj = 25°C
1
Qrr
Reverse Recovery Charge
IF = 15A
VR = 600V
di/dt =800A/s Tj = 125°C
3
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.85
RthJC
Junction to Case
Diode
1.5
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
2
3.5
N.m
Wt
Package Weight
185
g
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF15X120E2G | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120E2 | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120T3G | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X60BTP2 | 25 A, 600 V, N-CHANNEL IGBT |
| APTGF15X60RTP2 | 25 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF15X120P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X120T3G | 功能描述:IGBT MODULE NPT 3PH BRIDGE SP3 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF15X60BTP2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF15X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X60RTP2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
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