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参数资料
| 型号： | APTGF15X60BTP2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-24 |
| 文件页数： | 2/4页 |
| 文件大小： | 241K |
| 代理商： | APTGF15X60BTP2 |
APTGF15X60RTP2
APTGF15X60BTP2
A
PT
G
F1
5X
60
B
T
P2
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGF15X60BTP2) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
20
IC
Continuous Collector Current
TC = 80°C
10
ICM
Pulsed Collector Current
TC = 25°C
25
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
80
W
IF
DC Forward Current
TC = 80°C
10
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
25
IC
Continuous Collector Current
TC = 80°C
15
ICM
Pulsed Collector Current
TC = 25°C
37
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
100
W
SCSOA Short circuit Safe Operating Area
Tj = 125°C
65A @ 360V
IF
DC Forward Current
TC = 80°C
15
IFSM
Surge Forward Current
tp = 1ms
TC = 80°C
30
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
2
mA
IF = 30A
Tj = 25°C
1.3
1.5
VF
Forward Voltage
IF = 15A
Tj = 150°C
0.95
1
V
RthJC
Junction to Case
1
°C/W
IGBT Brake & Diode (only for APTGF15X60BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
0.5
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
0.8
mA
Tj = 25°C
1.95
2.35
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 10A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.35 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Tj = 25°C
1.25
1.70
VF
Forward Voltage
VGE = 0V
IF = 15A
Tj = 125°C
1.2
V
IGBT
1.5
RthJC
Junction to Case
Diode
1.8
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| APTGF15X60RTP2 | 25 A, 600 V, N-CHANNEL IGBT |
| APTGF15X60RTP2G | 25 A, 600 V, N-CHANNEL IGBT |
| APTGF15X60BTP2 | 25 A, 600 V, N-CHANNEL IGBT |
| APTGF15X60BTP2G | 25 A, 600 V, N-CHANNEL IGBT |
| APTGF165DA60D1G | 230 A, 600 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTGF15X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X60RTP2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF15X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF165A60D1G | 功能描述:IGBT NPT PHASE 600V 230A D1 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APTGF165DA60D1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Boost Chopper NPT IGBT Power Module |
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